Solid State Amplifier Module

Model SSM1-400M-300W

 

400 – 1000 MHz

300 watts
Minimum Rated Power

Features Include:

  • Solid-Sate Amplifier Module
  • Operate below maximum Ratings
  • Power Amplifier Modules
  • Sixth generation LDMOS Transistors
 

AMP-18_sm

 

IFI’s SSM1-400M microwave Solid-State RF Power Amplifier Module provides outstanding RF performance. These RF microwave amplifier modules are available in other frequency ranges and power levels.

IFIs   RF “Solid-State” power amplifier modules are conservatively designed to operate below maximum ratings for ruggedness and long term reliability. Sixth generation LDMOS Transistors provide reliable brute-power performance at frequencies up to 1.0 GHz. A product & design built to last!

IFI also utilizes GaN amplifier (gallium nitride) technology to create broadband and wideband solid-state amplifier modules. please consult IFI for additional information.AMP-18_sm

IFI SSM1-400M-300W Solid State Amplifier Module Specifications
Frequency: 400 MHz – 1.0 GHz
P1dB Power: 300W minimum, 350W nominal
Gain: 18 dB Average
Load: > 6:1 for all Phase Angles.
Voltage: 45 Volts DC
Drain Current: up to 20 Amps
Amp Enable: 0 VDC
Blank off: 5 VDC
Impedance: 50 Ohms
Average Efficiency: 44%
Power In: 5-6 watts nominal for 300W
Harmonics: -20 dBc
Base Operating Temp: 60 degrees C
Non-Operating Temp: -40C to +100 degrees C

 

IFI's RF solid state amplifier modules are now using GaN (Gallium Nitride Amplifier technology), which is perfect for both broadband and wideband applications.

SSM1-400M-300W solid state amplifier module performance data

For Typical Test Data Download the PDF here...

Specfications are subject to change without noticification
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